Semiconductor device having reduced gate charges and superior figure of merit
US11114559B2 · kind B2 · utility
0Cited by
75References
16Claims
0Family size
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Key dates
| Filing date | May 18, 2012 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | May 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes a first group of trench-like structures and a second group of trench-like structures. Each trench-like structure in the first group includes a gate electrode contacted to gate metal and a source electrode contacted to source metal. Each of the trench-like structures in the second group is disabled. The second group of disabled trench-like structures is interleaved with the first group of trench-like structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.