Patent assignee · US · COMPANY

Vishay-Siliconix, LLC

130Patents
112Active
130Granted
54Portfolio score

Filing activity: Jul 17, 2001 → Dec 23, 2021 · 38 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US7005347B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 46 Expired
US6906380B1 Drain side gate trench metal-oxide-semiconductor field effect transistor Electricity 43 Expired
US7335946B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 33 Expired
US9589929B2 Method for fabricating stack die package Electricity 22 Active
US7544545B2 Trench polysilicon diode Electricity 20 Active
US7344945B1 Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor Electricity 19 Expired
US7279743B2 Closed cell trench metal-oxide-semiconductor field effect transistor Electricity 18 Expired
US8080459B2 Self aligned contact in a semiconductor device and method of fabricating the same Electricity 18 Active
US8822273B2 Dual lead frame semiconductor package and method of manufacture Electricity 18 Active
US8367500B1 Method of forming self aligned contacts for a power MOSFET Electricity 17 Expired
US7868381B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 17 Active
US8629019B2 Method of forming self aligned contacts for a power MOSFET Electricity 16 Expired
US7833863B1 Method of manufacturing a closed cell trench MOSFET Electricity 16 Active
US6552889B1 Current limiting technique for hybrid power MOSFET circuits Electricity 16 Expired
US7361558B2 Method of manufacturing a closed cell trench MOSFET Electricity 15 Expired
US7494876B1 Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same Electricity 14 Expired
US9431249B2 Edge termination for super junction MOSFET devices Electricity 13 Active
US9425304B2 Transistor structure with improved unclamped inductive switching immunity Electricity 12 Active
US9437424B2 High mobility power metal-oxide semiconductor field-effect transistors Electricity 10 Active
US8582258B1 Electrostatic discharge protection circuit for integrated circuits Electricity 10 Active
US9443974B2 Super junction trench power MOSFET device fabrication Electricity 10 Active
US8368126B2 Trench metal oxide semiconductor with recessed trench material and remote contacts Electricity 10 Active
US9425306B2 Super junction trench power MOSFET devices Electricity 9 Active
US7211877B1 Chip scale surface mount package for semiconductor device and process of fabricating the same Electricity 9 Expired
US7151036B1 Precision high-frequency capacitor formed on semiconductor substrate Emerging Cross-Sectional Technologies 9 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.