Optoelectronic component

US11114584B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Joachim Hertkorn · Neukirchen, DE

Key dates

• Filing date: Aug 28, 2017
• Grant date: Sep 7, 2021
• Expiry date: May 3, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Alx1Iny1Ga1-x1-y1N with 0≤x1<0.03, 0≤y1≤0.1 and x1+y1≤1, and barrier layers including Alx2Iny2Ga1-x2-y2N with 0≤x2≤1, 0≤y2≤0.02 and x2+y2≤1, wherein the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max≥0.05, and a minimum value of the aluminium content in the barrier layers is x2,min<0.05.