Streamlined GaN-based fabrication of light emitting diode structures
US11114587B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2020 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Mar 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
Light Emitting Diodes (LEDs) made with GaN and related materials are used to realize high efficiency devices which emit visible radiation. These GaN-based LEDs consists of a multi-layer structure which include p-type electron confinement layers, and p-type current spreading and ohmic contacts layers located above the active region. The alignment of the etched features which penetrate near or through the active region and the ohmic contact is critical and is currently a technological challenge in the fabrication process. Any errors in this alignment and successive layers will short across the active layers of the device and result in reduced yield of functional devices. The invention described herein provides a method and apparatus to realize the successful alignment and streamlined fabrication of high-density LED array devices. The result is a higher pixel density GaN-based LED device with higher current handling capability resulting in a brighter device of the same area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.