Odyssey Semiconductor, Inc.
🏢 View company profile →6Patents
6Active
6Granted
51Portfolio score
Filing activity: Mar 9, 2020 → Apr 20, 2023
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11469348B1 | Beryllium doped GaN-based light emitting diode and method | Electricity | 1 | Active |
| US11652165B2 | Vertical field effect transistor device and method of fabrication | Electricity | 0 | Active |
| US11114587B1 | Streamlined GaN-based fabrication of light emitting diode structures | Electricity | 0 | Active |
| US11251295B1 | Vertical field effect transistor device and method of fabrication | Electricity | 0 | Active |
| US11942537B2 | Vertical field effect transistor device and method of fabrication | Electricity | 0 | Active |
| US11804574B2 | Streamlined GaN-based fabrication of light emitting diode structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.