EUV photo masks
US11119398B2 · kind B2 · utility
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10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Sep 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photo mask for extreme ultra violet (EUV) lithography includes a substrate having a front surface and a back surface opposite to the front surface, a multilayer Mo/Si stack disposed on the front surface of the substrate, a capping layer disposed on the multilayer Mo/Si stack, an absorber layer disposed on the capping layer, and a backside conductive layer disposed on the back surface of the substrate. The backside conductive layer is made of tantalum boride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.