Patent · US Active

Simulating near field image in optical lithography

US11119401B2 · kind B2 · utility

0Cited by

10References

21Claims

0Family size

Assignee

ASML US, LLC · US

Inventors

Jiangwei Li · Beijing, CN
Yumin Wang · Longbeilingcun, CN
Jun Liu · Shanghai, CN

Key dates

Filing date	Oct 30, 2017
Grant date	Sep 14, 2021
Priority date	—
Expiry date	Oct 30, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method and an apparatus for determining near field images for optical lithography include receiving a thin mask image indicative of a photomask feature, in which the thin mask image is determined without considering a mask topography effect associated with the photomask feature, and determining a near field image from the thin mask image by a processor using an artificial neural network (ANN), in which the ANN uses data of the thin mask image as input. The apparatus includes a processor and a memory coupled to the processor. The memory is configured to store instructions executed by the processor to perform the method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.