Memory arrays and methods used in forming a memory array comprising strings of memory cells
US11121144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Dec 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material. The first and second insulator materials comprise different compositions relative one another. Conductive vias are formed in the second insulator material that are individually directly electrically coupled to the individual channel-material strings thr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.