Electronic device and method for fabricating electronic device
US11121178B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Nov 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device may include a semiconductor memory. The semiconductor memory may include: row lines; column lines intersecting the row lines; memory cells located in intersection regions of the row lines and the column lines, the memory cells including upper and lower electrodes; and interface layers located between the lower electrodes of the memory cells and the row lines, the interface layers having a width narrower than that of the row lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.