Thin film transistor and method for manufacturing the same, array substrate and display device
US11121226B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Jan 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor includes: an active layer located on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source penetrating through the first interlayer dielectric layer, and connected to the active layer; a second interlayer dielectric layer located on one side of the first interlayer dielectric layer away from the active layer and covering the source; and a drain, wherein the drain comprises a first portion penetrating through the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.