High voltage semiconductor device and manufacturing method of high voltage semiconductor device
US11121253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2020 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Mar 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.