Si-containing film forming precursors and methods of using the same

US11124876B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Jean-Marc Girard · Versailles, FR
• Peng Zhang · Montvale, US
• Antonio Sanchez · Tsukuba, JP
• Manish Khandelwal · Danbury, US
• Gennadiy Itov · Flemington, US
• Reno Pesaresi · Houston, US
• Grigory Nikiforov · Bound Brook, US
• David Orban · Hampton, US

Key dates

• Filing date: Jun 21, 2019
• Grant date: Sep 21, 2021
• Expiry date: Jun 21, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02164
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2−d)Xd)(n−1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′3]; further wherein each R′ of the [SiR′3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group.