Method of treating a single crystal silicon ingot to improve the LLS ring/core pattern
US11124893B2 · kind B2 · utility
0Cited by
5References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2018 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Oct 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer. The method involves subjected a single crystal silicon ingot to an anneal prior to wafer slicing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.