Fin-FET gain cells
US11127455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Nov 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A FinFET gain cell includes a write port, read port and storage node. The write port includes at least one write FinFET transistor and has write word-line (WWL) and write bit-line (WBL) inputs. The read port includes at least one FinFET read transistor and has a read word-line (RWL) input and a read bit-line (RBL) output. The storage node stores a data level written from said WBL. The storage nodes includes a single layer interconnect which connects the write port output diffusion connection to the read port input gate connection. The height of the single layer interconnect at the write port output diffusion connection is different from the height of the single layer interconnect at the read port input gate connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.