Patent · US Active

Method of programming 3D memory device and related 3D memory device

US11127464B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Xue Yang · Beijing, CN
Kaikai You · 红钢城街道, CN

Key dates

Filing date	Mar 23, 2020
Grant date	Sep 21, 2021
Priority date	—
Expiry date	Mar 23, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/27
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In a channel-stacked memory device which includes a first channel stacked on a second channel, the first channel is programmed in a bottom-to-top direction and the second channel is programmed in a top-to-bottom direction. The electrons in the first channel may be drained by a bit line, while the electrons in the second channel may be drained by a well region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.