Nanostructure barrier for copper wire bonding
US11127515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2020 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Apr 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.