Plasma etching apparatus
US11127568B2 · kind B2 · utility
1Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | May 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.