Semiconductor processing applying supercritical drying
US11127588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Aug 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses, and systems related to semiconductor processing (e.g., of a capacitor support structure) are described. An example method includes patterning a surface of a semiconductor substrate to have a first silicate material, a nitride material over the first silicate material, and a second silicate material over the nitride material. The method further includes removing the first silicate material and the second silicate material and leaving the nitride material as a support structure for a column formed from a capacitor material. The method further includes performing supercritical drying on the column, after removal of the first and second silicate materials, to reduce a probability of the column wobbling relative to otherwise drying the column after the removal of the first and second silicate materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.