Techniques and apparatus for elongation patterning using angled ion beams
US11127593B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2018 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Aug 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.