Simon Ruffell
29Patents
4h-index
27Co-inventors
59Inventor score
Filing activity: May 11, 2012 → Sep 23, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8846508B1 | Method of implanting high aspect ratio features | Electricity | 17 | Active |
| US9984889B2 | Techniques for manipulating patterned features using ions | Electricity | 8 | Active |
| US9589811B2 | FinFET spacer etch with no fin recess and no gate-spacer pull-down | Electricity | 8 | Active |
| US10008384B2 | Techniques to engineer nanoscale patterned features using ions | Electricity | 4 | Active |
| US11043380B2 | Techniques to engineer nanoscale patterned features using ions | Electricity | 4 | Active |
| US11488823B2 | Techniques to engineer nanoscale patterned features using ions | Electricity | 2 | Active |
| US9934981B2 | Techniques for processing substrates using directional reactive ion etching | Electricity | 2 | Active |
| US9287123B2 | Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films | Electricity | 2 | Active |
| US11908691B2 | Techniques to engineer nanoscale patterned features using ions | Electricity | 1 | Active |
| US10971368B2 | Techniques for processing substrates using directional reactive ion etching | Electricity | 1 | Active |
| US9453279B2 | Method for selectively depositing a layer on a three dimensional structure | Electricity | 1 | Active |
| US10381232B2 | Techniques for manipulating patterned features using ions | Electricity | 1 | Active |
| US11127593B2 | Techniques and apparatus for elongation patterning using angled ion beams | Electricity | 1 | Active |
| US10222202B2 | Three dimensional structure fabrication control using novel processing system | Physics | 1 | Active |
| US9023722B2 | Compound semiconductor growth using ion implantation | Electricity | 1 | Active |
| US11664193B2 | Temperature controlled/electrically biased wafer surround | Electricity | 0 | Active |
| US10280512B2 | Apparatus and method for carbon film deposition profile control | Electricity | 0 | Active |
| US10546730B2 | Filling a cavity in a substrate using sputtering and deposition | Electricity | 0 | Active |
| US12106943B2 | Substrate halo arrangement for improved process uniformity | Electricity | 0 | Active |
| US9929015B2 | High efficiency apparatus and method for depositing a layer on a three dimensional structure | Electricity | 0 | Active |
| US11646213B2 | Multi-zone platen temperature control | Electricity | 0 | Active |
| US11640909B2 | Techniques and apparatus for unidirectional hole elongation using angled ion beams | Electricity | 0 | Active |
| US10665421B2 | In-situ beam profile metrology | Electricity | 0 | Active |
| US10229832B2 | Techniques for forming patterned features using directional ions | Electricity | 0 | Active |
| US10109494B2 | FinFet spacer etch with no fin recess and no gate-spacer pull-down | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.