Method of forming semiconductor device
US11127621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Dec 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes following steps. Firstly, a substrate is provided and the substrate has a first semiconductor layer formed thereon. Next, an isolating structure is formed in the first semiconductor layer, and a sacrificial layer is formed on the first semiconductor layer by consuming a top portion of the first semiconductor layer. Then, the sacrificial layer is removed to form a second semiconductor layer, and a portion of the isolating structure is also removed to form a shallow trench isolation (STI), with a top surface of the shallow trench isolation being substantially coplanar with a top surface of the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.