Three-dimensional memory device with source structure and methods for forming the same
US11127757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Dec 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, and a source structure. The memory stack is over a substrate and includes interleaved a plurality of conductor layers and a plurality of insulating layers. The plurality of channel structures extend vertically in the memory stack. The source structure extend in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure, and two adjacent ones of the plurality of source contacts are conductively connected to one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.