Patent · US Active

Lateral diffused metal oxide semiconductor field effect (LDMOS) transistor and device having LDMOS transistors

US11127855B2 · kind B2 · utility

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10Claims

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Assignee

Tower Semiconductors Ltd. · IL

Inventors

Daniel A. Sherman · Los Angeles, US
Sagy Levy · Jerusalem, IL
David Mistele · Haifa, IL

Key dates

Filing date	May 28, 2019
Grant date	Sep 21, 2021
Priority date	—
Expiry date	May 28, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/371
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A LDMOS transistor that may include (i) a first region that is a reduced surface field (RESURF) implant region of a first type; (ii) a second region that is a RESURF implant region of a second type, wherein the first type differs from the second type; (iii) a gate; (iv) a stepped oxide region and a gate oxide region that are positioned above the first region and below the gate. Each one of the first region and the second region has a substantially uniform thickness

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.