Inventor · Jerusalem, IL

Sagy Levy

76Patents
20h-index
34Co-inventors
88Inventor score

Filing activity: Sep 28, 1998 → Sep 26, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6451713B1 UV pretreatment process for ultra-thin oxynitride formation Electricity 467 Expired
US8093128B2 Integration of non-volatile charge trap memory devices and logic CMOS devices Electricity 84 Active
US8063434B1 Memory transistor with multiple charge storing layers and a high work function gate electrode Physics 75 Active
US6638876B2 Method of forming dielectric films Electricity 71 Expired
US6884719B2 Method for depositing a coating having a relatively high dielectric constant onto a substrate Electricity 70 Expired
US8318608B2 Method of fabricating a nonvolatile charge trap memory device Electricity 45 Active
US6191011A Selective hemispherical grain silicon deposition Electricity 39 Expired
US8163660B2 SONOS type stacks for nonvolatile change trap memory devices and methods to form the same Electricity 38 Active
US8067284B1 Oxynitride bilayer formed using a precursor inducing a high charge trap density in a top layer of the bilayer Electricity 35 Active
US7670963B2 Single-wafer process for fabricating a nonvolatile charge trap memory device Emerging Cross-Sectional Technologies 34 Active
US8679927B2 Integration of non-volatile charge trap memory devices and logic CMOS devices Electricity 32 Active
US8860122B1 Nonvolatile charge trap memory device having a high dielectric constant blocking region Electricity 32 Active
US8940645B2 Radical oxidation process for fabricating a nonvolatile charge trap memory device Electricity 31 Active
US8643124B2 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 25 Active
US9093318B2 Memory transistor with multiple charge storing layers and a high work function gate electrode Electricity 24 Active
US9449831B2 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 22 Active
US9355849B1 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 21 Active
US8633537B2 Memory transistor with multiple charge storing layers and a high work function gate electrode Electricity 21 Active
US8614124B2 SONOS ONO stack scaling Electricity 21 Active
US8993453B1 Method of fabricating a nonvolatile charge trap memory device Electricity 20 Active
US9306025B2 Memory transistor with multiple charge storing layers and a high work function gate electrode Physics 20 Active
US9349824B2 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 20 Active
US8859374B1 Memory transistor with multiple charge storing layers and a high work function gate electrode Physics 19 Active
US7799670B2 Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices Electricity 19 Active
US9502543B1 Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode Electricity 18 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.