Patent · US Active

Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

US11127880B2 · kind B2 · utility

0Cited by
1References
13Claims
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Key dates

Filing dateMay 10, 2019
Grant dateSep 21, 2021
Priority date
Expiry dateMay 10, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/84

Abstract

An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction, an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation, a radiation coupling-out region surrounding the electrical contact metallization at an edge side and an absorber layer structure arranged between the electrical contact metallization and the second region.

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