Variable resistance memory devices, and methods of forming variable resistance memory devices
US11127900B2 · kind B2 · utility
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8References
20Claims
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Key dates
| Filing date | Mar 20, 2020 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Mar 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.