Patent · US Active

Low-force wafer test probes

US11131689B2 · kind B2 · utility

0Cited by
12References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 2017
Grant dateSep 28, 2021
Priority date
Expiry dateJun 20, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/30
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Embodiments herein describe structures of low-force wafer test probes and formation thereof. Structures of low-force wafer test probes and their formation via gray scale etch or electroplating is described. Structures are described that include a lower base structure on top of a substrate and an upper blade structure on top of the lower base structure. In various embodiments, a crown of a C4 bump is accommodated by one or both of: i) a cavity present in the lower base structure; and ii) a height of the upper blade structure. Processes for fabricating probe structures are described that include forming lower base structures upon a substrate and forming upper blade structures on top of the lower base structures. The upper blade structures include at least one blade. Each of the blade(s) include a cutting edge that points toward a center point within the probe structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.