Patent · US Active

Imprint lithography template, system, and method of imprinting

US11131922B2 · kind B2 · utility

0Cited by

2References

14Claims

0Family size

Assignee

Canon Kabushiki Kaisha · JP

Inventors

Ecron D. Thompson · Round Rock, US
Andrew Robert Eckert · Pflugerville, US
Kosta S. Selinidis · Austin, US

Key dates

Filing date	Jun 6, 2016
Grant date	Sep 28, 2021
Priority date	—
Expiry date	Mar 17, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/0002
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An imprint lithography template including an alignment mark including at least two columns or at least two rows of features spaced apart from one another, and a dummy-fill region, wherein the alignment mark is spaced apart from the dummy-fill region, and wherein a closest distance between the at least two columns or the at least two rows is less than a closest distance between any portion of the at least two columns or the at least two rows and the dummy-fill region. In an embodiment, the at least two columns or the at least two rows are spaced apart by at least 0.5 microns. In a further embodiment, the closest distance between the at least two columns or the at least two rows and the dummy-fill region is at least 2 microns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.