High ruggedness heterojunction bipolar transistor
US11133405B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Mar 5, 2020 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Mar 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
Provided is a high ruggedness HBT, including a first emitter cap layer and a second emitter cap layer formed between an emitter layer and an ohmic contact layer, or only an emitter cap layer is formed between them. When the first and second emitter cap layers are provided, bandgaps of the first or second emitter cap layer are changed, and the ruggedness of the HBT is improved. When an emitter cap layer is provided, an electron affinity of at least a portion of the emitter cap layer is less than or approximately equal to an electron affinity of the emitter layer, and the ruggedness of the HBT is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.