Semiconductor device and method for fabricating the same
US11133418B2 · kind B2 · utility
0Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | May 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.