Lined photobucket structure for back end of line (BEOL) interconnect formation

US11137681B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• James M. Blackwell · Portland, US
• Robert L. Bristol · Portland, US
• Marie Krysak · Portland, US
• Florian Gstrein · Portland, US
• Eungnak Han · Portland, US
• Kevin Lin · Beaverton, US
• Rami Hourani · Santa Clara, US
• Shane M. Harlson · Beaverton, US

Key dates

• Filing date: Jul 1, 2016
• Grant date: Oct 5, 2021
• Expiry date: Mar 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76802
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Lined photoresist structures to facilitate fabricating back end of line (BEOL) interconnects are described. In an embodiment, a hard mask has recesses formed therein, wherein liner structures are variously disposed each on a sidewall of a respective recess. Photobuckets comprising photoresist material are also variously disposed in the recesses. The liner structures variously serve as marginal buffers to mitigate possible effects of misalignment in the exposure of photoresist material to photons or an electron beam. In another embodiment, a recess has disposed therein a liner structure and a photobucket that are both formed by self-assembly of a photoresist-based block-copolymer.