Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al)
US11139167B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 16, 2016 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Jun 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.