Method of manufacturing semiconductor memory
US11139313B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Nov 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor memory includes: forming a first lamination on a substrate; forming a first hole through the first lamination; embedding a first sacrificial material including a thermally decomposable organic material in the first hole; forming a recess at an upper portion of the first hole; forming an oxide film in the recess; removing the first sacrificial material under the oxide film; embedding a second sacrificial material on the oxide film in the recess; forming a second lamination on the first lamination and the second sacrificial material; forming a second hole through the second lamination at a position corresponding to the first hole by etching the second lamination in an extension direction of the first hole; and removing the oxide film and the second sacrificial material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.