Field-effect transistors with semiconducting gate

US11139374B2 · kind B2 · utility

Assignee

• The Hong Kong University of Science and Technology

Inventors

• Jing Chen · Hong Kong, CN
• Qingkai Qian · Kowloon, CN

Key dates

• Filing date: Aug 9, 2019
• Grant date: Oct 5, 2021
• Expiry date: Aug 9, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/221

Abstract

Field-effect transistors (FETs) are described that comprise a semiconducting gate (SG) layer, referred to herein as SG-FETs. In one or more embodiments, the FETs can include a channel layer and a SG layer capacitively coupled to the channel layer. The SG layer has an embedded voltage-clamping function that provides internal gate over voltage protection without an additional protection circuit. The embedded voltage-clamping function is based on the SG layer having a maximum effective gate voltage that is clamped to the depletion threshold of the SG layer.