IGBT device

US11139391B2 · kind B2 · utility

Assignee

• Shanghai Huahong Grace Semiconductor Manufacturing Corporation · CN

Inventors

• Jiye YANG · Shanghai, CN
• Junjun XING · Shanghai, CN
• Jia Pan · Shanghai, CN
• Hao Li · Nanhu, CN
• Yi LU · Taipei, TW
• Longjie Zhao · Shanghai, CN
• Xukun Zhang · 恩江镇, CN
• Xuan Huang · Beijing, CN
• Chong Chen · Singapore, SG

Key dates

• Filing date: Sep 10, 2019
• Grant date: Oct 5, 2021
• Expiry date: Sep 10, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/058

Abstract

An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and an emitter region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.