Jiye YANG
4Patents
0h-index
13Co-inventors
28Inventor score
Filing activity: Sep 26, 2018 → Sep 12, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10680070B2 | Trench gate manufacturing method | Electricity | 0 | Active |
| US12310069B2 | IGBT device and method of making the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US11139391B2 | IGBT device | Electricity | 0 | Active |
| US11374123B2 | Trench gate semiconductor device and method for making the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.