Etchant composition and method of fabricating semiconductor device
US11142694B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Sep 10, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Sep 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.