Gas cluster ion beam apparatus and analyzing apparatus
US11145484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2020 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | May 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An analyzing apparatus includes a sample chamber, a measurement apparatus, and a gas cluster ion beam apparatus. A cooling body separates an ionization chamber of the gas cluster ion beam apparatus from a nozzle support to prevent heat emitted by an ionization filament from being transmitted to the nozzle support, and a temperature of a source gas emitted from a nozzle is kept at a constant temperature by a gas heating device while a sputtering rate is kept constant. A pressure of the source gas supplied to the nozzle is kept at constant pressure by a pressure controller, and a size of gas cluster ions is kept at a constant value. Because the sputtering rate is a constant value, highly accurate depth surface profiling can be performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.