Selective passivation and selective deposition

US11145506B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Jan Willem Maes · Wilrijk, BE
• Michael Eugene Givens · Phoenix, US
• Suvi Haukka · Helsinki, FI
• Vamsi K. Paruchuri · New York, US
• Ivo Raaijmakers · Bilthoven, NL
• Shaoren Deng · Evergem, BE
• Andrea Illiberi · Leuven, BE
• Eva Tois · Helsinki, FI
• Delphine Longrie · Wondelgem, BE

Key dates

• Filing date: Sep 30, 2019
• Grant date: Oct 12, 2021
• Expiry date: Nov 22, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/321
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.