Field effect transistor with an atomically thin channel

US11145549B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Thomas Alava · Grenoble, FR
• Thomas Ernst · Morette, FR
• Zheng Han · Grenoble, FR

Key dates

• Filing date: Sep 11, 2018
• Grant date: Oct 12, 2021
• Expiry date: Sep 11, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Production of a transistor, the channel structure of which comprises at least one finned channel structure, the method comprising: forming, from a substrate (1), a molding block (3), forming, on the molding block, a thin layer (7) made from a given semiconductor or semi-metallic material, and consisting of one to ten atomic or molecular monolayers of two-dimensional crystal, withdrawing the molding block while retaining a portion (7a) of the thin layer extending against a lateral face of the molding block, said retained portion (7a) forming a fin that is capable of forming a channel structure of the transistor,