Thomas Ernst
27Patents
8h-index
39Co-inventors
75Inventor score
Filing activity: Oct 23, 1986 → Aug 11, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4862324A | Switchgear enclosure and method of fabrication | Electricity | 18 | Expired |
| US6450381B1 | Device and method for guiding a transversely stable material web | Performing Operations; Transporting | 17 | Expired |
| US7518195B2 | Field-effect microelectronic device, capable of forming one or several transistor channels | Electricity | 15 | Expired |
| US8492232B2 | Production of a transistor gate on a multibranch channel structure and means for isolating this gate from the source and drain regions | Electricity | 14 | Active |
| US8502318B2 | SRAM memory cell provided with transistors having a vertical multichannel structure | Electricity | 12 | Active |
| US8656584B2 | Method of fabricating an electromechanical component using graphene | Emerging Cross-Sectional Technologies | 12 | Active |
| US9053976B2 | Structure and production process of a microelectronic 3D memory device of flash NAND type | Electricity | 10 | Active |
| US7910917B2 | Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels | Electricity | 9 | Active |
| US8288823B2 | Double-gate transistor structure equipped with a multi-branch channel | Electricity | 5 | Active |
| US8088674B2 | Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes | Emerging Cross-Sectional Technologies | 4 | Active |
| US8367487B2 | Structure and method for fabricating a microelectronic device provided with one or more quantum wires able to form one or more transistor channels | Electricity | 3 | Active |
| US7902575B2 | Field-effect microelectronic device, capable of forming one or several transistor channels | Electricity | 3 | Active |
| US9601352B2 | Method of localized annealing of semi-conducting elements using a reflective area | Emerging Cross-Sectional Technologies | 2 | Active |
| US10216698B2 | Analysis device including a MEMS and/or NEMS network | Emerging Cross-Sectional Technologies | 2 | Active |
| US8343780B2 | Method of stressing a thin pattern | Electricity | 1 | Active |
| US8246775B2 | Method of implanting RFID tags in corrugated paperboard | Emerging Cross-Sectional Technologies | 1 | Active |
| US9382108B2 | Nanowire sensor device | Performing Operations; Transporting | 1 | Active |
| US7820523B2 | Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor | Emerging Cross-Sectional Technologies | 1 | Active |
| US10670507B2 | Electromechanical detection device, particularly for gravimetric detection, and method for manufacturing the device | Physics | 0 | Active |
| US7879690B2 | Method of fabricating a microelectronic structure of a semiconductor on insulator type with different patterns | Electricity | 0 | Active |
| US11145549B2 | Field effect transistor with an atomically thin channel | Electricity | 0 | Active |
| US8252636B2 | Method of manufacturing nanowires parallel to the supporting substrate | Electricity | 0 | Active |
| US12261565B2 | Electric motor control system | Electricity | 0 | Active |
| US8173545B2 | Method for the fabrication of a transistor gate using at least one electron beam | Electricity | 0 | Active |
| US12308780B2 | Stepper motor control | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.