Patent · US Active

Semiconductor package and method of manufacturing the same

US11145611B2 · kind B2 · utility

2Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 20, 2020
Grant dateOct 12, 2021
Priority date
Expiry dateFeb 20, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18161
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor package includes a redistribution structure including a redistribution insulating layer and a redistribution pattern, a semiconductor chip provided on a first surface of the redistribution insulation layer and electrically connected to the redistribution pattern, and a lower electrode pad provided on a second surface opposite to the first surface of the redistribution insulating layer, the lower electrode pad including a first portion embedded in the redistribution insulating layer and a second portion protruding from the second surface of the redistribution insulating layer, wherein a thickness of the first portion of the lower electrode pad is greater than a thickness of the second portion of the lower electrode pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.