Method for manufacturing active matrix board
US11145679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2020 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Mar 17, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing an active matrix board includes (E) a step of forming a source contact hole and a drain contact hole in an interlayer insulating layer such that a portion of a source contact region of an oxide semiconductor layer and a portion of a drain contact region thereof are exposed and forming a connecting portion contact hole in the interlayer insulating layer and a lower insulating layer such that a portion of a lower conductive layer is exposed; and (F) a step of forming a source electrode, a drain electrode, and an upper conductive layer on the interlayer insulating layer; and the step (E) includes (e-1) a step of forming a photoresist film on the interlayer insulating layer and (e-2) a step of forming a photoresist layer in such a manner that the photoresist film is exposed to light using a multi-tone mask and is then developed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.