Semiconductor device and method for manufacturing the same
US11145730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Nov 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first gate structure, a plurality of first gate spacers, a second gate structure, and a plurality of second gate spacers. The substrate has a first fin structure and a second fin structure. The first gate structure is over the first fin structure, in which the first gate structure includes a first high dielectric constant material and a first metal. A bottom surface of the first high dielectric constant material is higher than bottom surfaces of the first gate spacers. The second gate structure is narrower than the first gate structure and over the second fin structure, in which the second gate structure includes a second high dielectric constant material and a second metal. A bottom surface of the second high dielectric constant material is lower than bottom surfaces of the second gate spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.