Semiconductor structure with doped contact plug and method for forming the same
US11145751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2018 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.