Semiconductor memory device
US11152431B2 · kind B2 · utility
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Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Oct 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
An electronic device includes a semiconductor memory. The semiconductor memory comprises a first variable resistance element coupled between a first wiring and a second wiring, the first variable resistance element including a first variable resistance layer having a first width at a first distance from the first wiring; and a second variable resistance element coupled between the second wiring and a third wiring, the second variable resistance element including a second variable resistance layer having a second width at the first distance from the second wiring. The first width is greater than the second width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.