Semiconductor device, method of making a semiconductor device, and processing system

US11152479B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Gaurav Thareja · Santa Clara, US
• Xuebin Li · Santa Clara, US
• Abhishek Dube · Fishkill, US
• Yi-Chiau Huang · Fremont, US
• Andy Lo · San Diego, US
• Patricia M. Liu · Saratoga, US
• Sanjay Natarajan · Portland, US
• Saurabh Chopra · Sunnyvale, US

Key dates

• Filing date: Jan 27, 2020
• Grant date: Oct 19, 2021
• Expiry date: Feb 5, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

The present disclosure generally relates to methods for forming a semiconductor device, a semiconductor device, and a processing chamber. The method includes forming a source/drain region in a processing system, forming a doped semiconductor layer on the source/drain region in the processing system, forming a metal silicide layer, forming a dielectric material, forming a trench in the dielectric material, and filling the trench with a conductor. The source/drain region, the doped semiconductor layer, and the metal silicide layer are formed without breaking vacuum. A semiconductor device includes a plurality of layers, and the semiconductor device has reduced contact resistance. A processing system is configured to perform the method and form the semiconductor device. Embodiments of the present disclosure enable formation of a source/drain contact with reduced contact resistance by using integrated processes, which allows various operations of the source/drain contact formation to be performed within the same processing system.