Doped encapsulation material for diamond semiconductors
US11152483B2 · kind B2 · utility
0Cited by
7References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 17, 2019 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.