IC structure base and inner E/C material on raised insulator, and methods to form same
US11152496B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2020 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Jan 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide an integrated circuit (IC) structure, including: a semiconductor base on a first portion of a raised region of an insulative layer; a first inner emitter/collector (E/C) material on a second portion of the raised region of the insulative layer, wherein the inner E/C material is directly horizontally between the semiconductor base and a sidewall of the raised region; and a first outer E/C material on a first non-raised region of the insulative layer, wherein an upper portion of the first outer E/C material is adjacent the first inner E/C material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.