Inventor · Troy, NY, US

Alexander M. Derrickson

39Patents
1h-index
37Co-inventors
49Inventor score

Filing activity: Jan 3, 2020 → May 14, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US11575029B2 Lateral bipolar junction transistor and method Electricity 1 Active
US11843044B2 Bipolar transistor structure on semiconductor fin and methods to form same Electricity 1 Active
US11710771B2 Non-self-aligned lateral bipolar junction transistors Electricity 1 Active
US11152496B2 IC structure base and inner E/C material on raised insulator, and methods to form same Electricity 1 Active
US11888050B2 Lateral bipolar transistor structure with inner and outer spacers and methods to form same Electricity 0 Active
US12349374B2 Lateral bipolar transistors Electricity 0 Active
US11588044B2 Bipolar junction transistor (BJT) structure and related method Electricity 0 Active
US11804542B2 Annular bipolar transistors Electricity 0 Active
US11810969B2 Lateral bipolar transistor Electricity 0 Active
US11462632B2 Lateral bipolar junction transistor device and method of making such a device Electricity 0 Active
US11094805B2 Lateral heterojunction bipolar transistors with asymmetric junctions Electricity 0 Active
US11424349B1 Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices Electricity 0 Active
US12040388B2 Lateral bipolar transistors Electricity 0 Active
US11646361B2 Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin Electricity 0 Active
US12408417B2 Forksheet semiconductor structure including at least one bipolar junction transistor and method Electricity 0 Active
US11855197B2 Vertical bipolar transistors Electricity 0 Active
US12159926B2 Lateral bipolar transistor Electricity 0 Active
US11949004B2 Lateral bipolar transistors with gate structure aligned to extrinsic base Electricity 0 Active
US12327776B1 Heat sink for face bonded semiconductor device Electricity 0 Active
US11862717B2 Lateral bipolar transistor structure with superlattice layer and method to form same Electricity 0 Active
US11916109B2 Bipolar transistor structures with base having varying horizontal width and methods to form same Electricity 0 Active
US11799021B2 Lateral bipolar transistor structure with marker layer for emitter and collector Electricity 0 Active
US11749727B2 Bipolar junction transistors with duplicated terminals Electricity 0 Active
US12336243B2 Lateral bipolar transistor with gated collector Electricity 0 Active
US11916136B2 Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.